JSCJ Transistors

Bipolar / MOSFET


The abbreviation JSCJ stands for Jiangsu Changjing Electronics Co., Ltd, a strongly emerging young company located in the city of Nanjing in Jiangsu province, China. JSCJ is the offspring of JCET, one of TOP3 of World’s biggest OSAT (Outsourced Semiconductor Assembly & Test) companies and dedicated (with this powerful background) to become one of the leading players in its market for semiconductor products.

JSCJ is offering a huge variety of products to address markets in the Industry, Consumer and Whitegoods sector and is furthermore continuously advancing into Automotive applications is focusing diodes, transistors, frequency devices (Crystal and Oscillator) and ICs with an ever-growing product portfolio. JCET, not only serves its own brand “JSCJ” but also many international semiconductors companies as ODM partner, has industry leading quality standards and carries certificates like ISO9001, ISO14001, OHSAS18001 and IATF16949.

JSCJ and BECK ELEKTRONIK cooperate from the very early stage of the founding of the brand “JSCJ” in 2019.


Bipolar Junction Transistors / BJT

Bipolar transistor has an npn-structure or pnp-structure therefore comprises two subsequent pn-junctions. It have both electrons and holes as charge carriers. Bipolar junction transistors are usually used in 2 diffirent types of applications: Switching and Amplification.

JSCJ's transistor portfolio includes Gerneral Purpose Transistor, Darlington Transistor, Digital Transistor, Low Satuation Transistor, High Voltage Switching Transistor, Electronic Energy-saving Lamp, Ballast Special Switching Transistor with following technical advantages:

  • Perfect transistor accessory products
  • Low VSAT transistor products
  • Full range of digital transistor products

Overview of JSCJ's Transistor Product Portfolio


Small Signal Mosfet & Power Mosfet

Metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of insulated-gate field-effect transistor, which is widely used for switching and amplifying signals with capability to work up to a few hundred KHz.

JSCJ's MOSFET portfolio offers a range of breakdown voltages from –100 to 800 V combined with state-of-the art packaging and following technical advantages:

  • Complete MOSFET accessory products
  • China's first CSP MOSFET products
  • Industry leading MOS R&D level 

Overview of JSCJ's MOSFET Product Portfolio

JSCJ’s new released CSP (chip scale packaging) Power Mosfet CJ6207SP:

The CJ6207SP uses advanced trench technology to provide excellent RSS(ON) (common Drain topology) , low gate charge and operation with gate voltages as low as 2.5 V while retaining a 8 V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common-drain configuration.