PANJIT Wide Bandgap (SiC) Semiconductors

Schottky Diode


The taiwanese company PANJIT International Inc. has been manufacturing semiconductor components for the industry since 1986. Today, the further development and production of its own semiconductor products takes place at several locations in Asia: PANJIT owns two front-end and two back-end factories, of one each in China and one in Taiwan. There, the complete manufacturing process from wafer production to testing takes place in the company‘s own production facilities.

PANJIT‘s focus is on the automotive, industrial, energy and consumer goods sectors. As a special feature PANJIT has SiC Schottky diodes (SiC = silicon carbide) in its program. PANJIT can show the industry-standard certificates such as ISO 9001, ISO 14001, OHSAS 18001 and IATF 16949.

BECK Elektronik and PANJIT are bound in partnership for more than 15 years.

PANJIT's SiC Schokkty Diodes

SiC (Silicon Carbide) is a compound semiconductor comprised of silicon (SI) and carbon (C).

SiC has many advantages in comparision to Si:

  1. SiC has ten times the dieletric breakdown field strength of Si
  2. SiC has three times the bandgap of Si
  3. SiC has three times the thermal conductivity of Si

These advantages make SiC devices far exceed the performance of their Si counterpartes with higher breakdown voltage, lower resistivity and higher operation temperature.

PANJIT offers  SiC Schottky Diode from 650V to 1200V Breakdown Voltage and from 2A to 11A forward current.

Based on SiC and packaging technology PANJIT's SiC Schokkty Diodes have following features:

  • Temperature Independent fast Switching Behavior
  • Low Conduction and Switching Loss (less noise)
  • High Surge Current Capability
  • Positive Temperature Coefficient on Vf ( avoid thermal run away when used in parallel )
  • Fast Reverse Recovery
  • 175°C Maximum Operating Junction Temperature

Product overview of SiC Schottky Diodes of our partner PANJIT (AEC-Q available)