PANJIT Wide Bandgap (SiC) Semiconductors

Schottky Diode


Company PANJIT International Inc. was founded in 1986 in Kaohsiung Taiwan. PANJIT is employing approximately 3.000 people worldwide in their production sites and offices in Asia, Europe and the USA. With one Front-End factory in Taiwan and two Back-End factories in both, Taiwan and mainland China, Panjit is targeting the market segments like Automotive -, Industry-, Power- and Consumer-Applications.

It’s well assorted product spectrum stretches over various kinds of Diodes, MOSFETs, Bipolar Transistors and Protection devices and has some specialties like SiC Schottky Diodes (SiC = Siliciumcarbid). PANJIT is decorated with industry’s well known and required certificates like ISO9001, ISO14001, OHSAS18001 and IATF16949.

PANJIT and BECK ELEKTRONIK have formed a long and dedicated partnership for more than 15 years.

PANJIT's SiC Schokkty Diodes

SiC (Silicon Carbide) is a compound semiconductor comprised of silicon (SI) and carbon (C).

SiC has many advantages in comparision to Si:

  1. SiC has ten times the dieletric breakdown field strength of Si
  2. SiC has three times the bandgap of Si
  3. SiC has three times the thermal conductivity of Si

These advantages make SiC devices far exceed the performance of their Si counterpartes with higher breakdown voltage, lower resistivity and higher operation temperature.

PANJIT offers SiC Schottky Diode from 650V to 1200V Breakdown Voltage and from 2A to 11A forward current.

Based on SiC and packaging technology PANJIT's SiC Schokkty Diodes have following features:

  • Temperature Independent fast Switching Behavior
  • Low Conduction and Switching Loss (less noise)
  • High Surge Current Capability
  • Positive Temperature Coefficient on Vf ( avoid thermal run away when used in parallel )
  • Fast Reverse Recovery
  • 175°C Maximum Operating Junction Temperature

Product overview of SiC Schottky Diodes of our partner PANJIT (AEC-Q available)