New SODDB3/ SODDB3T DIACs (bi-directional trigger diodes) have been released.

These DIACs offer a reverse breakover voltage (VBO) of 32 V and a maximum power dissipation (PD) of 400 mW.

Based on planar process technology the leakage current is measured
at <1 µA (IR<10µA@VB=½VBO) with a stable high temperature performance.

Available in wire-bonded gull-wing SOD-123 package they are ideally…

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The new 600/700 V N-Channel Power MOSFETs in Super-Junction technology with RDS(on) of 0.75 and 1.4 O have been launched in TO-251 (IPAK) and TO-252 (DPAK) packages.

Super-Junction Power MOSFETs by TSC offer low RDS(on) and high efficiency.

Features:

• Super-Junction technology
• High performance due to small figure-of-merit
• High ruggedness performance
• High commutation performance

Applicatio…

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The Trench Schottky technology patented by TSC offers excellent high temperature stability, lower forward voltage drop, and lower power loss for a given silicon surface area.

It offers high energy efficiency and high forward surge capability.

TSC Trench Schottky devices are optimized for low and ultra-low VF (respectively “L” and “U”-type) or low/ultra-low IR (“M”, “H”-type).

The broad…

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The MOSFET portfolio of Taiwan Semiconductor has been expanded to include various Low Voltage MOSFETs for general purpose application use:

• 30 V N-Channel & -30 V P-Channel MOSFET, SOP-8 package
• -60 V (D-S) P-Channel MOSFET, TO-251S (IPAK) and TO-252 (DPAK) package
• 30~60 V (D-S) N-Channel MOSFET, TO-251S (IPAK), TO-252 (DPAK) and SOT-223 package

These devices are based on a 0.18 µm Trench…

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