News Category: Active Components
Optoelectronics, Active Components, BECK Elektronik
N-Channel Super-Junction Power MOSFETs
The new 600/700 V N-Channel Power MOSFETs in Super-Junction technology with RDS(on) of 0.75 and 1.4 O have been launched in TO-251 (IPAK) and TO-252 (DPAK) packages.
Super-Junction Power MOSFETs by TSC offer low RDS(on) and high efficiency.
Features:
- Super-Junction technology
- High performance due to small figure-of-merit
- High ruggedness performance
- High commutation performance
Applicatio…
Active Components, BECK Elektronik
Trench Schottky Rectifiers: optimized for low and ultra-low VF (V) or low/ultra-low IR (µA)
The Trench Schottky technology patented by TSC offers excellent high temperature stability, lower forward voltage drop, and lower power loss for a given silicon surface area.
It offers high energy efficiency and high forward surge capability.
TSC Trench Schottky devices are optimized for low and ultra-low VF (respectively “L” and “U”-type) or low/ultra-low IR (“M”, “H”-type).
The broad…
Active Components, BECK Elektronik
LV MOSFETs for 30~60 V Range
The MOSFET portfolio of Taiwan Semiconductor has been expanded to include various Low Voltage MOSFETs for general purpose application use:
- 30 V N-Channel & -30 V P-Channel MOSFET, SOP-8 package
- -60 V (D-S) P-Channel MOSFET, TO-251S (IPAK) and TO-252 (DPAK) package
- 30~60 V (D-S) N-Channel MOSFET, TO-251S (IPAK), TO-252 (DPAK) and SOT-223 package
These devices are based on a 0.18 µm Trench…