News Category: Active Components

Beck power electronics at the PCIM

High-current relays, DC link capacitors and power modules for demanding applications

Beck Elektronik will be presenting high-performance components for the future of energy conversion and distribution at PCIM 2025 in Nuremberg. The focus will be on tried-and-tested solutions for new energy, automotive and industry.

From May 6 to 8, 2025, Beck Elektronik will be showcasing three highlight product…

Power modules

PCIM is just around the corner, and at BECK Elektronik preparations are in full swing! As your reliable partner for electronic components, we will be presenting the latest highlights in the field of power modules.

Whether IGBT or SiC, screw terminal or press-fit pin, base plate or pinfins – BECK offers you a comprehensive selection for your applications. Whatever your R&D heart desires and you…

Electronica 2024 in München

From November 12 to 15, we had the opportunity to present our latest solutions and highlight products from the fields of active and passive components, electromechanics, displays, optoelectronics and LEDs at Electronica 2024 in Munich.

In dialog with our visitors and partners, we were able to exchange valuable ideas and gain exciting insights into the future of the electronics industry. The…

Highlight products at the Electronica 2024

We look forward to presenting our latest innovations and solutions to you at Electronica 2024! As a leading partner for electronic components, we showcase product highlights that can be valuable for your applications. Visit us at our booth and discover how our latest technologies can drive your business forward.

November 12 – 15, 2024
Electronica, Messe München
Hall C4, Booth 259 

Gate Driver IC – Basic Modules & Discrets

Basic Modules & Discrets

 
BASiC Semiconductor Ltd.
, the innovative enterprise of Wide-Band-Gap semiconductor industry in China, is offering modules and discretes in SiC chip technology, and matching gate driver ICs.

These gate driver ICs are developed for a variety of applications and are adaptable to different power devices due to insulation withstand voltage up to 8000V, drive current up to…

The new EEPROM LR24** series

The new EEPROM LR24** series

 
We are pleased to introduce an exciting addition to the IC product portfolio of our partner Leshan Radio Company “LRC”: non-volatile, erasable electronic memory chips – EEPROMs!

  
What are EEPROMs?

EEPROMs (electrically erasable programmable read-only memory) are usually used to store small amounts of data in electrical circuits.

LR24** series at a glance:

  • I²…
MOSFETs in the TOLL package

Beck Elektronik presents the latest innovation from JSCJ

We are pleased to present an exciting innovation from the product portfolio of our partner JSCJ: MOSFETs in the TOLL Package.

These MOSFETs offer a number of impressive features that make them an indispensable part of modern circuit designs. Their excellent heat dissipation and exceptionally high current capability ensure that even the…

900A – 1200V module with pin fins

Following the customers' demands for modules with higher currents, the Chinese manufacturer for power modules Leapers offers a 900A/1200V module with pins fins, ideally suited for water cooling. The half bridge IGBT power module in a ED3 package comes with Si3N4 AMB substrate. This substrate offers higher mechanical strength with a higher thermal conductivity compared to the standard materials.…

SiC MOSFETs from Leapers

The E0 series (Fig#1) and E2 series (Fig#2) of silicon carbide (SiC) MOSFET power semiconductor modules from Japan and China-based manufacturer Wuxi Leapers Semiconductor Co, Ltd – "Leapers" for short – are ideally suited for use in the following application areas: Renewable energy, air compressors, industrial frequency converters and uninterruptible power supplies (UPS).

The E0 series

Power MOSFETs in PDFN*5x6 package

We offer a variety of high performance, efficient power MOSFETs in PDFN*5x6 (Power Dual Flat No-Lead) package with an edge dimension of 5mm × 6mm!

In this package MOSFETs with a drain-source-voltage VDS  of up to 600V or a drain-current ID of up to 200A are available! All components have a drain-source-resistance RDS(on) as small as possible to reduce switching losses to a minimum. Together with…