The Trench Schottky technology patented by TSC offers excellent high temperature stability, lower forward voltage drop, and lower power loss for a given silicon surface area.

It offers high energy efficiency and high forward surge capability.

TSC Trench Schottky devices are optimized for low and ultra-low VF (respectively “L” and “U”-type) or low/ultra-low IR (“M”, “H”-type).

The broad…

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SMD fuse with high breaking capacity (UMT-H)

The SMD fuse UMT-H has been extended with 13 additional rated currents and is now offered with a total of 19 rated currents, which covers the rated currents between 160 mA and 10 A. With a rated breaking capacity of 1500 A, this compact SMD fuse is capable of protecting against short circuits, while providing reliable overcurrent protection. The…

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The MOSFET portfolio of Taiwan Semiconductor has been expanded to include various Low Voltage MOSFETs for general purpose application use:

• 30 V N-Channel & -30 V P-Channel MOSFET, SOP-8 package
• -60 V (D-S) P-Channel MOSFET, TO-251S (IPAK) and TO-252 (DPAK) package
• 30~60 V (D-S) N-Channel MOSFET, TO-251S (IPAK), TO-252 (DPAK) and SOT-223 package

These devices are based on a 0.18 µm Trench…

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