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The Trench Schottky technology patented by TSC offers excellent high temperature stability, lower forward voltage drop, and lower power loss for a given silicon surface area.

It offers high energy efficiency and high forward surge capability.

TSC Trench Schottky devices are optimized for low and ultra-low VF (respectively “L” and “U”-type) or low/ultra-low IR (“M”, “H”-type).

The broad…

The MOSFET portfolio of Taiwan Semiconductor has been expanded to include various Low Voltage MOSFETs for general purpose application use:

  • 30 V N-Channel & -30 V P-Channel MOSFET, SOP-8 package
  • -60 V (D-S) P-Channel MOSFET, TO-251S (IPAK) and TO-252 (DPAK) package
  • 30~60 V (D-S) N-Channel MOSFET, TO-251S (IPAK), TO-252 (DPAK) and SOT-223 package

These devices are based on a 0.18 µm Trench…