The TPAR3D-TPAR3J and TPAU3D-TPAU3J families of 3A ultra-fast rectifiers are new high performance products, low reverse recovery time (trr) rectifier portfolio.

The leakage and low reverse recovery time of these rectifiers significantly reduces power losses in switch mode power conversion applications.

The RoHS compliant, halogen free, low profile TO-277 (SMPC) package offers a small footprint…

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RABS15M is a fast recovery glass passivated bridge rectifier in a miniature ABS-L package, and makes them ideal for automated placement and compact PCB design.

This bridge rectifier offer high surge-current (IFSM) capability and ultrafast reverse recovery time (trr) for high frequency applications.

Features:

• Ideal for automated placement, compact PCB design
• High surge current capability
• Ult…

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TPMR10D, TPMR10G and TPMR10J rectifiers were designed with lower forward voltage (VF) to minimize the conduction losses of secondary rectification in SMPS applications, where the switching frequency are in the tens of kHz.

The miniature, high power density SMPC (TO-277A) package with a height of only 1.1 mm is perfect for space constrained designs.
These devices are applicable to operating…

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The TS19730 is a cost-effective AC-DC LED driver with integrated power factor correction (PFC), THD less than 10%, and constant current output load regulation to within ±2.5%.

It operates in boundary conduction mode (BCM) to achieve PFC greater than 0.9 and high efficiency conversion. TS19730 also provides voltage clamp protection for the gate driving output, VCC over-voltage protection, and…

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White LED Driver (TS1916CX6)

The TS1916CX6 is a step-up (Boost) converter designed for driving up to 10 series white LEDs. 
The TS1916 uses current mode, 1 MHz fixed frequency architecture to regulate the LED current, which is set through an external current sense resistor. Its low feedback voltage reduces power loss and improves efficiency. The over voltage protection pin monitors the output…

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New SODDB3/ SODDB3T DIACs (bi-directional trigger diodes) have been released.

These DIACs offer a reverse breakover voltage (VBO) of 32 V and a maximum power dissipation (PD) of 400 mW.

Based on planar process technology the leakage current is measured
at <1 µA (IR<10µA@VB=½VBO) with a stable high temperature performance.

Available in wire-bonded gull-wing SOD-123 package they are ideally…

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The new 600/700 V N-Channel Power MOSFETs in Super-Junction technology with RDS(on) of 0.75 and 1.4 O have been launched in TO-251 (IPAK) and TO-252 (DPAK) packages.

Super-Junction Power MOSFETs by TSC offer low RDS(on) and high efficiency.

Features:

• Super-Junction technology
• High performance due to small figure-of-merit
• High ruggedness performance
• High commutation performance

Applicatio…

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The Trench Schottky technology patented by TSC offers excellent high temperature stability, lower forward voltage drop, and lower power loss for a given silicon surface area.

It offers high energy efficiency and high forward surge capability.

TSC Trench Schottky devices are optimized for low and ultra-low VF (respectively “L” and “U”-type) or low/ultra-low IR (“M”, “H”-type).

The broad…

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The MOSFET portfolio of Taiwan Semiconductor has been expanded to include various Low Voltage MOSFETs for general purpose application use:

• 30 V N-Channel & -30 V P-Channel MOSFET, SOP-8 package
• -60 V (D-S) P-Channel MOSFET, TO-251S (IPAK) and TO-252 (DPAK) package
• 30~60 V (D-S) N-Channel MOSFET, TO-251S (IPAK), TO-252 (DPAK) and SOT-223 package

These devices are based on a 0.18 µm Trench…

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